publication da te : oct.2011 1 RA60H1317M rohs compliance , 135-175mhz 60w 12.5v, 3 stage amp. for mobile radio description the RA60H1317M is a 60-watt rf mosfet amplifier module for 12.5-volt mobile radios that operate in the 135- to 175-mhz range. the battery can be connected di rectly to the drain of the enhancement-mode mosfet transistors. without the gate voltage (v gg =0v), only a small leakage current flows into the drain and the rf input signal attenuates up to 60 db. the output power and drain current increase as the gate voltage increases. with a gate voltage around 4v (minimum), output power and drain current increases substantially. the nominal output power becomes av ailable at 4.5v (typical) and 5v (maximum). at v gg =5v, the typical gate current is 1 ma. this module is designed for non-linear fm modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. features ? enhancement- mode mosfet transistors (i dd ? 0 @ v dd =12.5v, v gg =0v) ? p out >60w, t >40% @ v dd =12.5v, v gg =5v, p in =50mw ? broadband frequency range: 135-175mhz ? low-power control current i gg =1ma (typ) at v gg =5v ? module size: 66 x 21 x 9.88 mm ? linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the out put power with the input power rohs compliance ? RA60H1317M-101 is a rohs compliant products. ? rohs compliance is indicate by the letter ?g? after the lot marking. ? this product include the lead in the glass of electronic parts and the lead in electronic ceramic parts. however, it is applicable to the follo wing exceptions of rohs directions. 1.lead in the glass of a cathode-ray t ube, electronic parts, and fluorescent tubes. 2.lead in electronic ceramic parts. ordering information: order number supply form RA60H1317M-101 antistatic tray, 10 modules/tray 1 rf input (p in ) 2 gate voltage (v gg ), power control 3 drain voltage (v dd ), battery 4 rf output (p out ) 5 rf ground (case) block diagram 2 4 1 5 3 package code: h2s
RA60H1317M rohs compliance , 135-175mhz 60w 12.5v, 3 stage amp. for mobile radio publication da te : oct.2011 2 maximum ratings (t case =+25c, unless otherwise specified) symbol parameter conditions rating unit v dd drain voltage v gg <5v 17 v v gg gate voltage v dd <12.5v, p in =0mw 6 v p in input power 100 mw p out output power 75 w t case(op) operation case temperature range f=135-175mhz, z g =z l =50 ? -30 to +110 c t stg storage temperature range -40 to +110 c note1. the above parameters are independently guaranteed. note2. in order to keep high reliability of the equipment, it is better to keep the module temperature of the module is recommended to keep lower than 90 c under all conditions, and to keep lower than 60 c under standard conditions. electrical characteristics (t case =+25c, z g =z l =50 ? , unless otherwise specified) symbol parameter conditions min typ max unit f frequency range 135 - 175 mhz p out output power 60 - - w t total efficiency 40 - - % 2f o 2 nd harmonic - - -25 dbc in input vswr - - 3:1 ? i gg gate current v dd =12.5v v gg =5v p in =50mw - 1 - ma ? stability v dd =10.0-15.2v, p in =25-70mw, p out <70w (v gg control), load vswr=3:1 no parasitic oscillation ? ? load vswr tolerance v dd =15.2v, p in =50mw, p out =60w (v gg control), load vswr=8:1 no degradation or destroy ? all parameters, conditions, ratings, and limi ts are subject to change without notice.
RA60H1317M rohs compliance , 135-175mhz 60w 12.5v, 3 stage amp. for mobile radio publication da te : oct.2011 3 output power, total efficiency, 2 nd , 3 rd harmonics versus frequency and input vswr versus frequency output power, power gain and output power, power gain and drain current versus input power drain current versus input power output power, power gain and drain current versus input power 0 10 20 30 40 50 60 70 80 90 135 145 155 165 175 frequency f(mhz) output power p out (w) input vswr in (-) 0 10 20 30 40 50 60 70 80 90 total efficiency t (%) v dd =12.5v v gg =5v p in =50mw p out t in 0 10 20 30 40 50 60 70 -10 -5 0 5 10 15 20 input power p in (dbm) output power p out (dbm) power gain gp(db) 0 2 4 6 8 10 12 14 drain current i dd (a) f=135mhz, v dd =12.5v, v gg =5v p out i dd gp 0 10 20 30 40 50 60 70 -10 -5 0 5 10 15 20 input power p in (dbm) output power p out (dbm) power gain gp(db) 0 2 4 6 8 10 12 14 drain current i dd (a) f=155mhz, v dd =12.5v, v gg =5v p out gp i dd -70 -60 -50 -40 -30 -20 135 145 155 165 175 frequency f(mhz) harmonics (dbc) v dd =12.5v v gg =5v p in =50mw 2 nd 3 rd 0 10 20 30 40 50 60 70 -10 -5 0 5 10 15 20 input power p in (dbm) output power p out (dbm) power gain gp(db) 0 2 4 6 8 10 12 14 drain current i dd (a) f=175mhz, v dd =12.5v, v gg =5v p out gp i dd typical performance (t case =+25c, z g =z l =50 ? , unless otherwise specified)
RA60H1317M rohs compliance , 135-175mhz 60w 12.5v, 3 stage amp. for mobile radio publication da te : oct.2011 4 output power and drain current output power and drain current versus gate voltage versus gate voltage output power and drain current versus gate voltage 0 10 20 30 40 50 60 70 80 33.544.55 gate voltage v gg (v) output power p out (w) 0 2 4 6 8 10 12 14 16 drain current i dd (a) p out f=135mhz, v dd =12.5v, p in =50mw i dd 0 10 20 30 40 50 60 70 80 33.544.55 gate voltage v gg (v) output power p out (w) 0 2 4 6 8 10 12 14 16 drain current i dd (a) p out f=155mhz, v dd =12.5v, p in =50mw i dd 0 10 20 30 40 50 60 70 80 33.544.55 gate voltage v gg (v) output power p out (w) 0 2 4 6 8 10 12 14 16 drain current i dd (a) p out f=175mhz, v dd =12.5v, p in =50mw i dd typical performance (t case =+25c, z g =z l =50 ? , unless otherwise specified)
RA60H1317M rohs compliance , 135-175mhz 60w 12.5v, 3 stage amp. for mobile radio publication da te : oct.2011 5 outline drawing (mm) 12.0 1 16.5 1 43.5 1 55.5 1 66.0 0.5 60.0 0.5 51.5 0.5 3.0 0.3 7.25 0.8 14.0 1 21.0 0.5 9.5 0.5 2.0 0.5 2-r2 0.5 17.0 0.5 ?0.45 0.15 4.0 0.3 5 1 2 3 4 3.1 +0.6/-0.4 7.5 0.5 2.3 0.3 (9.88) (50.4) 0.09 0.02 1 rf input (p in ) 2 gate voltage (v gg ) 3 drain voltage (v dd ) 4 rf output (p out ) 5 rf ground (case)
RA60H1317M rohs compliance , 135-175mhz 60w 12.5v, 3 stage amp. for mobile radio publication da te : oct.2011 6 test block diagram 1 rf input (p in ) 2 gate voltage (v gg ) 3 drain voltage (v dd ) 4 rf output (p out ) 5 rf ground (case) equivalent circuit c1, c2: 4700 p f, 22uf in p arallel directional coupler attenuator power meter spectrum analyzer signal generator attenuator pre- amplifier power meter directional coupler dut 5 4 3 2 1 z g =50 ? ?
RA60H1317M rohs compliance , 135-175mhz 60w 12.5v, 3 stage amp. for mobile radio publication da te : oct.2011 7 recommendations and application information: construction: this module consists of an alumina substrate soldered onto a copper flange. for mechanical protection, a plastic cap is attached with silicone. the mosfet transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. lines on the substrate (eventua lly inductors), chip capacitors, and resist ors form the bias and matching circuits. wire leads soldered onto the alumina subs trate provide the dc and rf connection. following conditions must be avoided: a) bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes) b) mechanical stress on the wire leads (for example, by first soldering then dr iving screws or by thermal expansion) c) defluxing solvents reacting with the resin coating on the mosfet chips (for example, trichloroethylene) d) esd, surge, overvoltage in combination with load vswr, and oscillation esd: this mosfet module is sensitive to esd voltages down to 1000v. appropriate esd precautions are required. mounting: heat sink flatness must be less than 50 m (a heat sink that is not flat or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). a thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink. the module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. m3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm. soldering and defluxing: this module is designed for manual soldering. the leads must be soldered after the module is screwed onto the heat sink. the temperature of the lead (terminal) soldering should be lower than 350c and shorter than 3 second. ethyl alcohol is recommend for removing flux. trichloroethy lene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). thermal design of the heat sink: at p out =60w, v dd =12.5v and p in =50mw each stage transistor operating conditions are: stage p in (w) p out (w) r th(ch-case) (c/w) i dd @ t =40% (a) v dd (v) 1 st 0.05 2.0 29.0 0.23 2 nd 2.0 18.0 2.4 3.40 3 rd 18.0 60.0 1.2 8.20 12.5 the channel temperatures of each stage transistor t ch = t case + (v dd x i dd - p out + p in ) x r th(ch-case) are: t ch1 = t case + (12.5v x 0.23a ? 2.0w + 0.05w) x 29.0c/w = t case + 26.8 c t ch2 = t case + (12.5v x 3.40a - 18.0w + 2.0w) x 2.4c/w = t case + 63.6c t ch3 = t case + (12.5v x 8.20a - 60.0w + 18.0w) x 1.2c/w = t case + 72.6 c for long-term reliability, it is best to keep the module case temperature (t case ) below 90c. for an ambient temperature t air =60c and p out =60w, the required thermal resistance r th (case-air) = ( t case - t air ) / ( (p out / t ) - p out + p in ) of the heat sink, including the contact resistance, is: r th(case-air) = (90c - 60c) / (60w/40% ? 60w + 0.05w) = 0.33 c/w when mounting the module with the thermal resistance of 0.33 c/w, the channel temperature of each stage transistor is: t ch1 = t air + 56.8 c t ch2 = t air + 93.6 c t ch3 = t air + 102.6 c the 175c maximum rating for the channel temperature ensures application under derated conditions.
RA60H1317M rohs compliance , 135-175mhz 60w 12.5v, 3 stage amp. for mobile radio publication da te : oct.2011 8 output power control: depending on linearity, the following two methods are recommended to control the output power: a) non-linear fm modulation: by the gate voltage (v gg ). when the gate voltage is close to zero, the rf input signal is attenuated up to 60 db and only a small leakage current flows fr om the battery into the drain. around v gg =4v, the output power and drain cu rrent increases substantially. around v gg =4.5v (typical) to v gg =5v (maximum), the nominal output power becomes available. b) linear am modulation: by rf input power p in . the gate voltage is used to set the drain?s quiescent current for the required linearity. oscillation: to test rf characteristics, this module is put on a fixture wi th two bias decoupling capacitors each on gate and drain, a 4.700 pf chip capacitor, located close to the module, and a 22 f (or more) electrolytic capacitor. when an amplifier circuit around this module show s oscillation, the following may be checked: a) do the bias decoupling capacitors have a lo w inductance pass to the case of the module? b) is the load impedance z l =50 ? ? c) is the source impedance z g =50 ? ? attention: 1.high temperature; this produc t might have a heat generation while operation,pleas e take notice that have a possibility to rec eive a burn to touch the operating product directly or t ouch the product until cold after switch off. at the near the product,do not place t he combustible material that have possibilities to arise the fire. 2. generation of high frequency power; this product generate a high frequency powe r. please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipm ent in consideration of the risk for human and electric wave obs tacle for equipment. precaution for the use of mitsubishi silicon rf power amplifier devices: 1.the specifications of mention are not guarantee values in this data sh eet. please confirm additional details regarding operat ion of these products from the formal s pecification sheet. for copies of the formal spec ification sheets, please contact one of our s ales offices. 2.ra series products (rf power amplifier modules) and rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is suffici ent to guarantee the level of reliability ty pically deemed necessary for critical com munications elements. in the application, which is base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, pl ease consider the derating, the redundancy system, appropriat e setting of the maintain period and others as needed. for the reliability report which is described about pr edicted operating li fe time of mitsubishi silicon rf products , please contact mitsubishi electr ic corporation or an authorized mitsubishi semiconductor produ ct distributor . 3.ra series products use mosfet semiconductor technology. they are sensitive to esd vo ltage therefore appropriate esd precautions are required. 4.in order to maximize reliability of the equipment, it is be tter to keep the devices temperature low. it is recommended to ut ilize a sufficient sized heat-sink in conjunction wi th other cooling methods as needed (fan, etc.) to keep t he case temperature for ra series products lower than 60deg/c under standard conditions , and less than 90deg/c under extreme conditions. 5.ra series products are designed to operat e into a nominal load impedance of 50 ohms. under the condition of operating into a severe high load vswr approaching an open or short, an over load condition could occur. in the worst case there is risk for burn out of the transistors and burning of other parts in cluding the substrate in the module. 6.the formal specification includes a guarant ee against parasitic oscillation under a s pecified maximum load mismatch condition . the inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. it is recommended that verification of no parasitic oscillation be performed at the completed equipment level also. 7.for specific precautions regarding assemb ly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8.warranty for the product is void if the pr oducts protective cap (lid) is removed or if the product is modified in any way fro m it?s original form. 9.for additional ?safety first? in your circuit design and notes regarding the materials, please refer the last page of this da ta sheet. 10. please refer to the additional precaut ions in the formal specification sheet.
RA60H1317M rohs compliance , 135-175mhz 60w 12.5v, 3 stage amp. for mobile radio publication da te : oct.2011 9 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effo rt into making semiconductor products better and more reliable, but there is alwa ys the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appr opriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ?these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any ot her rights, belonging to mitsubishi elec tric corporation or a third party. ?mitsubishi electric corporation assumes no res ponsibility for any damage, or infringement of any third-party?s rights, originating in the use of any pr oduct data, diagrams, charts, programs, algorithms, or circuit application examples c ontained in these materials. ?all information contained in thes e materials, including product data, diagrams, charts, programs and algorithms represents information on pr oducts at the time of publication of these materials, and are subject to change by mitsubishi electric cor poration without notice due to product improvements or other reasons. it is therefore recommended that cust omers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distri butor for the latest product info rmation before pu rchasing a product listed herein. the information described here may contain technica l inaccuracies or typographical errors. mitsubishi electric corporation assumes no re sponsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to info rmation published by mitsubishi electr ic corporation by various means, including the mitsubishi semiconductor home page (http://www. m itsubishi e lectric.com/). ?when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, pleas e be sure to evaluate all informati on as a total system before making a final decision on the applic ability of the information and products. mi tsubishi electric corporation assumes no responsibility for any damage, liabilit y or other loss resulting from the information contained herein. ?mitsubishi electric corporation semiconductors are not designed or m anufactured for use in a device or system that is used under circum stances in which human life is pot entially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a pr oduct contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aeros pace, nuclear, or undersea repeater use. ?the prior written approval of mitsubishi electric corporat ion is necessary to reprint or reproduce in whole or in part these materials. ?if these products or technologies ar e subject to the japanese export cont rol restrictions, they must be exported under a license from the ja panese government and cannot be im ported into a country other than the approved destination. any diversion or re-export contrary to the export contro l laws and regulations of japan and/or the country of destination is prohibited. ?please contact mitsubishi electric corporation or an authorized mitsubi shi semiconductor product distributor for further details on these material s or the products contained therein.
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